RJH60F7-RENESAS, TR-IGBT 600V 50A (TO247), TRANZISTORI, IGBT

Features: 

 Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)

 Built in fast recovery diode in one package

 Trench gate and thin wafer technology

 High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 Ohm, Ta = 25°C, inductive load) 

Šifra: 120778

Količina: 0

Kataloški brojevi:

Zamjena: MBQ50T65FDHC, NGTG50N60FLWG-ON