IRF6811STR-IR(DIRECTFET), TR-HEXFET+SCHOTTKY 25V 74A, , TRANZISTORI

Manufacturer Infineon Technologies
Series HEXFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 19A (Ta), 74A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.7mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 2.1V @ 35µA
Gate Charge (Qg) (Max) @ Vgs 17nC @ 4,5V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 1590pF @ 13V
FET Feature -
Power Dissipation (Max) 2.1W (Ta), 32W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount

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