SQJ570EP-T1-VISHAY, TR-N/P-FET 100V/-100V 15A/-9.5A (SO8L-DU, N, P FET

Manufacturer: Vishay

Product Category: MOSFET

Technology: Si

Mounting Style: SMD/SMT

Package/Case: Power PAK-SO-8L-4

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-ChannelVds - Drain-Source

Breakdown Voltage: 100 VId -

Continuous Drain Current: 15 A, 9.5 A

Rds On - Drain-Source Resistance: 45 mOhms, 146 mOhms

Vgs th - Gate-Source Threshold Voltage: 1.5 VVgs  

Gate-Source Voltage: 10 VQg  

Gate Charge: 9 nC, 12 nC

Minimum Operating Temperature: - 55 C

Maximum Operating Temperature: + 175 C

Pd - Power Dissipation: 27 W, 27 W

Configuration: Dual

Channel Mode: Enhancement

Qualification: AEC-Q101

Tradename: TrenchFET

Height: 1.04 mm

Length: 6.15 mm

Series: SQ

Transistor Type: 1 N-Channel, 1 P-Channel

Width: 5.13 mm

Brand: Vishay / Siliconix

Forward Transconductance - Min: 15 S, 7 S

Fall Time: 17 ns, 15 ns

Product Type: MOSFET

Rise Time: 4 ns, 5 ns

Subcategory: MOSFETs Typical Turn-Off Delay Time: 20 ns, 30 ns

Typical Turn-On Delay Time: 8 ns, 12 ns

Unit Weight: 506,600 mg
 

Šifra: 121752

Količina: 3

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