SP8M6-ROHM(SO8), TR-N/P-FET 30/-30V ; 5/-3.5A 2W, N, P FET

Description: Power Field-Effect Transistor, 5A I(D), 30V, 0.082ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Rohm Semiconductor
Series -
Packaging  [?] Cut Tape (CT)  [?]
Part Status Discontinued at Digi-Key
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 5A, 3.5A
Rds On (Max) @ Id, Vgs 51mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 3.9nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 230pF @ 10V
Power - Max 2W
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOP

Šifra: 121353

Količina: 4

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