AP4506GEM-AP(SO8), TR-MD-SN/P FET 30V 30mA 6.4A, N, P FET

Type Designator: AP4506GEM-HF

Type of Transistor: MOSFET

Type of Control Channel: NP -Channel

Maximum Power Dissipation (Pd): 2 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 6.4(6) A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 5.6 nS

Drain-Source Capacitance (Cd): 100(220) pF

Maximum Drain-Source On-State Resistance (Rds): 0.03(0.04) Ohm

Package: SO8

Šifra: 121170

Količina: 6

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