STP4NB100-ST, TR-N-FET 4A 1000V(TO220), TRANZISTORI, N-FET

Manufacturer: STMicroelectronics

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 2A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Case: TO-220-3

Šifra: 29359

Količina: 2

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