STP12NM60N-ST(TO220F), TR-N-FET 600V 10A 410mR 25W, TRANZISTORI, N-FET

Manufacturer: STMicroelectronics
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 60 V
Id - Continuous Drain Current: 60 A
Rds On - Drain-Source Resistance: 16 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 54 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 110 W
Channel Mode: Enhancement
Tradename: STripFET
Packaging: Tube
Brand: STMicroelectronics
Configuration: Single
Fall Time: 20 ns
Forward Transconductance - Min: 50 S
Height: 9.15 mm
Length: 10.4 mm
Product Type: MOSFET
Subcategory: MOSFETs
Transistor Type: 1 N-Channel Power MOSFET
Type: MOSFET
Typical Turn-Off Delay Time: 45 ns
Typical Turn-On Delay Time: 15 ns
Width: 4.6 mm
Unit Weight: 2 g
 

Šifra: 126826

Količina: 9

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