STB12NM50T4-ST, TR-N FET 550V 11A (TO263/D2PAK), TRANZISTORI, N-FET

Manufacturer: STMicroelectronics
Product Category: MOSFET
RoHS:  Details
Technology: Si
Mounting Style: SMD/SMT
Package/Case: D2PAK-3 (TO-263-3)
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 500 V
Id - Continuous Drain Current: 12 A
Rds On - Drain-Source Resistance: 900 mOhms
Vgs - Gate-Source Voltage: - 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage: 4 V
Qg - Gate Charge: 42 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 90 W
Channel Mode: Enhancement
Tradename: MDmesh
Series: STB14NM50N
Configuration: Single
Fall Time: 32 ns
Product Type: MOSFET
Rise Time: 9 ns
Factory Pack Quantity: 1000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Type: MDmesh II Power MOSFET
Typical Turn-Off Delay Time: 12 ns
Typical Turn-On Delay Time: 15 ns
Unit Weight: 4 g

Šifra: 114846

Količina: 4

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