STB100NF04-S, TR-N-FET 40V 120A 300W (TO263/D2PAK), TRANZISTORI, N-FET

Manufacturer: STMicroelectronics
Product Category: MOSFET
RoHS:  Details
Technology: Si
Mounting Style: SMD/SMT
Package/Case: D2PAK-3 (TO-263-3)
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 40 V
Id - Continuous Drain Current: 120 A
Rds On - Drain-Source Resistance: 4.6 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 4 V
Qg - Gate Charge: 110 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 300 W
Channel Mode: Enhancement
Qualification: AEC-Q101
Series: STB100NF04
Configuration: Single
Fall Time: 50 ns
Forward Transconductance - Min: 150 S
Height: 4.6 mm
Length: 10.4 mm
Product Type: MOSFET
Rise Time: 220 ns
Factory Pack Quantity: 1000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Type: MOSFET
Typical Turn-Off Delay Time: 80 ns
Typical Turn-On Delay Time: 35 ns
Width: 9.35 mm
Unit Weight: 4 g

Šifra: 119421

Količina: 1

Kataloški brojevi: B100NF04

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