IXTP60N10T-IXYS, TR-N-FET 100V 60A 176W 0,018R (TO220AB), TRANZISTORI, N-FET

Product Category: MOSFET
Manufacturer: IXYS
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 60 A
Rds On - Drain-Source Resistance: 18 mOhms
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Channel Mode: Enhancement
Configuration: Single
Fall Time: 37 ns
Forward Transconductance - Min: 42 S
Height: 9.15 mm
Length: 10.66 mm
Pd - Power Dissipation: 176 W
Rise Time: 40 ns
Series: IXTP60N10

Šifra: 116457

Količina: 5

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