IXTP200N055T2-IXYS, TR-N-FET 55V 200A 360W 4.7mR(TO220), TRANZISTORI, N-FET

Product Category: MOSFET
Manufacturer: IXYS
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 55 V
Id - Continuous Drain Current: 200 A
Rds On - Drain-Source Resistance: 4.2 mOhms
Vgs - Gate-Source Voltage: 20 V
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Channel Mode: Enhancement
Brand: IXYS
Configuration: Single
Fall Time: 27 ns
Height: 9.15 mm
Length: 10.66 mm
Pd - Power Dissipation: 360 W
Rise Time: 22 ns
Series: IXTP200N055
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 49 ns
Typical Turn-On Delay Time: 26 ns
Width: 4.83 mm
Unit Weight: 2,300 g

Šifra: 118065

Količina: 9

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