IXFX27N80Q-IXYS, TR-N-FET 800V 27A 500W RDS:0.32 (TO247), TRANZISTORI, N-FET

Manufacturer: IXYS
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-247-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 800 V
Id - Continuous Drain Current: 27 A
Rds On - Drain-Source Resistance: 320 mOhms
Vgs th - Gate-Source Threshold Voltage: 4.5 V
Vgs - Gate-Source Voltage: 20 V
Qg - Gate Charge: 170 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Configuration: Single
Pd - Power Dissipation: 500 W
Channel Mode: Enhancement
Height: 21.34 mm
Length: 16.13 mm
Series: IXFX27N80
Transistor Type: 1 N-Channel
Type: HiPerFET Power MOSFETS Q-CLASS
Width: 5.21 mm
Brand: IXYS
Forward Transconductance - Min: 20 S
Fall Time: 13 ns
Product Type: MOSFET
Rise Time: 28 ns
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 50 ns
Typical Turn-On Delay Time: 20 ns
Unit Weight: 1,600 g
 

Šifra: 120766

Količina: 1

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