2SK2221-HIT, TR-N-FET 200V 8A(TO3P), TRANZISTORI, N-FET

Channel Type: N
Maximum Continuous Drain Current: 8 A
Maximum Drain Source Voltage: 200 V
Maximum Gate Threshold Voltage: 1.45V
Maximum Gate Source Voltage: ±20 V
Mounting Type: Through Hole
Transistor Configuration: Single
Pin Count: 3
Channel Mode: Enhancement
Category: Power MOSFET
Maximum Power Dissipation: 100 W
Typical Input Capacitance @ Vds 600 pF@ 10 V
Typical Turn-Off Delay Time: 90 ns
Width: 4.8mm
Number of Elements per Chip: 1
Transistor Material: Si
Typical Turn-On Delay Time: 250 ns
Maximum Operating Temperature: +150 °C
 

Šifra: 118146

Količina: 10

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