IRF2807PBF-IR, TR-N-FET 75V 82A 200W <13mR(TO220AB), N-FET, TO220AB

Maximum Operating Temperature: +175 °C
Number of Elements per Chip: 1
Transistor Configuration: Single
Typical Turn-On Delay Time: 13 ns
Brand: International Rectifier
Typical Turn-Off Delay Time: 49 ns
Maximum Continuous Drain Current: 82 A
Package Type: TO-220AB
Maximum Power Dissipation: 230 W
Series: HEXFET
Mounting Type: Through Hole
Minimum Operating Temperature: -55 °C
Maximum Gate Threshold Voltage: 4V
Minimum Gate Threshold Voltage: 2V
Maximum Drain Source Resistance: 13 mΩ
Maximum Drain Source Voltage: 80 V
Pin Count: 3
Dimensions: 10.54 x 4.69 x 8.77mm
Category: Power MOSFET
Typical Gate Charge @ Vgs: 160 nC @ 10 V
Transistor Material: Si
Channel Mode: Enhancement
Typical Input Capacitance @ Vds: 3820 pF@ 25 V
Channel Type: N
Maximum Gate Source Voltage: -20 V, +20 V

Šifra: 30477

Količina: 19

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