IRF8313PBF-INF, TR-N-FET 30V 9.7A 2W 0,0155(SO8), TRANZISTORI, N-FET-SO8

Manufacturer: Infineon Technologies

Series: HEXFET®
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.7A
Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 175°C (TJ)

Šifra: 117339

Količina: 10

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