RJP30H1DPD-RENESAS
TR-SMD-N-IGBT 360V 30A 240W (TO263/D2PAK
Šifra:114009
VPC Cijena: 5,26 €
MPC Cijena: 6,57 €
Dodaj u košaricu
Dodano u košaricu!
PDF
RJP30H1DPD-RENESAS, TR-SMD-N-IGBT 360V 30A 240W (TO263/D2PAK, TRANZISTORI, IGBT
Features
Trench gate and thin wafer technology (G6H-II series)
High speed switching: tr = 80 ns typ., tf = 150 ns typ.
Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ.
Low leak current: ICES = 1 µA max.
Mogućnost narudžbe zamjenskog proizvoda
IC-SMD-DIGITAL,MONOSTABIL,MULTIVIBR.
Dodano u košaricu!
Dodaj u košaricu
Info
0,66 €
20 - ima na lageru

