IXFX34N80-IXYS(TO247), TR-IGBT-800V 34A 560W 240mR, TRANZISTORI, IGBT

Manufacturer: IXYS
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-247-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 800 V
Id - Continuous Drain Current: 34 A
Rds On - Drain-Source Resistance: 240 mOhms
Vgs - Gate-Source Voltage: 20 V
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Configuration: Single
Pd - Power Dissipation: 560 W
Channel Mode: Enhancement
Tradename: HyperFET
Packaging: Tube
Height: 21.34 mm
Length: 16.13 mm
Series: IXFX34N80
Transistor Type: 1 N-Channel
Width: 5.21 mm
Brand: IXYS
Forward Transconductance - Min: 35 S
Fall Time: 40 ns
Product Type: MOSFET 
Rise Time: 45 ns
Factory Pack Quantity: 30
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 100 ns
Typical Turn-On Delay Time: 45 ns
Unit Weight: 7,300 g
 

Šifra: 120800

Količina: 10

Kataloški brojevi: IXFK34N80

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