IXFK34N80-IXYS(TO264), TR-IGBT 800V 34A 0.24R 560W, TRANZISTORI, IGBT

Manufacturer: IXYS
Product Category: MOSFET 
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-264-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 800 V
Id - Continuous Drain Current: 34 A
Rds On - Drain-Source Resistance: 240 mOhms
Vgs - Gate-Source Voltage: 20 V
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 560 W
Configuration: Single
Channel Mode: Enhancement
Tradename: HyperFET
Height: 26.16 mm
Length: 19.96 mm
Series: IXFK34N80
Transistor Type: 1 N-Channel
Width: 5.13 mm
Brand: IXYS
Forward Transconductance - Min: 35 S
Fall Time: 40 ns
Product Type: MOSFET
Rise Time: 45 ns
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 100 ns
Typical Turn-On Delay Time: 45 ns
Unit Weight: 10 g

Šifra: 121194

Količina: 3

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